This paper deals with the design and modelling of Flexure FET and the FETs are the one of the important fundamental devices in electronic devices. In this paper we are going analyses one of the MEMS Flexure Gate Field Effect Transistors. Here we will design gate of the FLEXURE FET with different type of materials and with different structure and we made the comparison between all the structures. We apply pull-in voltage to the Gate with respect to the change in the gate voltage the respective displacement of the gate changes which reflect the change in the drain current and sensitivity.